Effect of an in-plane magnetic field and a δ-doping on the electron transport in a nonmagnetic heterostructure

被引：8
|
作者：
Lu, Jian-Duo [1 ]
Li, Yun-Bao [1 ]
Peng, Shun-Jin [1 ]
Liu, Hong-Yu [1 ]
Wang, Yu-Hua [1 ]
Chen, Hong [1 ]
机构：
[1] Wuhan Univ Sci & Technol, Hubei Prov Key Lab Syst Sci Met Proc, Wuhan 430081, Peoples R China
来源：
PHYSICS LETTERS A | 2016年 / 380卷 / 18-19期
基金：
中国国家自然科学基金;
关键词：
Semiconductor heterostructure; delta-Doping; In-plane magnetic field; Spin polarization; SPIN-ORBIT INTERACTIONS; BARRIER LAYERS; WAVE-GUIDES; NANOSTRUCTURE; SEMICONDUCTOR; INJECTION; JUNCTIONS;
D O I：
10.1016/j.physleta.2016.02.047
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The electron tunneling through a nonmagnetic heterostructure modulated by both the in-plane magnetic field and the delta-doping has been investigated in detail using the transfer-matrix method. The numerical results indicate that, in such a nonmagnetic device, one can obtain the considerable spin polarization which is dependent on the in-plane magnetic field and the delta-doping as well as the wave vector in the plane of the barrier. Thus, we can design the spintronic devices based on nonmagnetic heterostructures controlled by the in-plane magnetic field and the delta-doping as well as the wave vector. (c) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：1668 / 1671
页数：4
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