Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field

被引：4
|
作者：
Jin, Dong-Dong [1 ,2 ,3 ]
Yang, Shao-Yan [1 ,2 ]
Zhang, Liu-Wan [3 ]
Li, Hui-jie [1 ,2 ]
Zhang, Heng [1 ,2 ]
Wang, Jian-xia [1 ,2 ]
Yang, Tao [1 ,2 ]
Liu, Xiang-Lin [1 ,2 ]
Zhu, Qin-Sheng [1 ,2 ]
Wang, Zhan-Guo [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
[3] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 21期
基金：
美国国家科学基金会;
关键词：
GAS; SYSTEMS; DOTS;
D O I：
10.1063/1.4809763
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study theoretically the effect of the in-plane magnetic field on two-dimensional electron gas transport in GaAs/InGaAs single quantum well structure. Our results show that, due to the scatterers (GaSb quantum dots) are one-side distributed, the in-plane magnetic field leads to an anisotropic scattering probability, which results in a higher mobility along the direction perpendicular to the magnetic field. Besides, compared with the no magnetic field case, the mobility shows a parabolic increasing trend as the in-plane magnetic field strength increases. (C) 2013 AIP Publishing LLC.
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页数：4
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