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Development of High-power High-thermal Conductivity GaN High Electron Mobility Transistors

被引：0
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作者：
Lin, Dai-Jie [1 ]
Lee, Yu-Hsuan [1 ]
Huang, Jian-Jang [1 ,2 ]
机构：
[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页数：1
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