Nanoscale Memristors: Devices Engineering, CMOS Integration and Novel Applications

被引：0

作者：

Xia, Qiangfei ^{[1
]}

机构：

[1] Univ Massachusetts, Dept Elect & Comp Engn, Nanodevices & Integrated Syst Lab, Amherst, MA 01003 USA

来源：

2015 IEEE INTERNATIONAL CONFERENCE ON DIGITAL SIGNAL PROCESSING (DSP) | 2015年

关键词：

memristor; scaling; reactive sputtering; SiOx devices; hybrid circuits;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We scaled the memristor devices in a crossbar arrays down to 8 nm using nanoimprint lithography. With reactive sputtering, we tuned the electrical properties of TiOx based memristors. We developed a silicon oxide device with ultra-thin layer chemically produced oxide that exhibited low voltage and electrode-dependent switching behavior. Finally, we integrated planar memristive devices with CMOS substrates, implementing hybrid circuits with lower switching voltage and better uniformity.

引用

页码：1216 / 1218

页数：3

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