CMOS devices and beyond - A process integration perspective

被引：0

作者：

Hutchby, JA ^{[1
]}

Zhirnov, V ^{[1
]}

Cavin, R ^{[1
]}

Bourianoff, G ^{[1
]}

机构：

[1] Semicond Res Corp, Res Triangle Pk, NC 27709 USA

来源：

CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY | 2003年 / 683卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Development of CMOS technology is approaching severe technological limits in the next 10 - 15 years. Overcoming these limits will demand introduction of new manufacturable materials and device structures to extend the speed of silicon integrated circuits at the historical rate of 17% per year to the end of the 2001 International Technology Roadmap for Semiconductors (2016). Following a brief discussion of these limits, this paper will review the most promising approaches to new materials, device structures and issues related to their integration in advanced CMOS structures. The paper will conclude with some brief observations and issues regarding extension of CMOS-like FET structures via new nano-scale materials.

引用

页码：74 / 80

页数：7

共 50 条

[1] Potentials and challenges of integration for complex metal oxides in CMOS devices and beyond
Kim, Y.
Pham, C.
Chang, J. P.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2015, 48 (06)
[2] Novel devices and process for 32 nm CMOS technology and beyond
WANG YangYuan
[J]. Science China(Information Sciences), 2008, (06) : 743 - 755
[3] Novel devices and process for 32 nm CMOS technology and beyond
YangYuan Wang
Xing Zhang
XiaoYan Liu
Ru Huang
[J]. Science in China Series F: Information Sciences, 2008, 51 : 743 - 755
[4] Novel devices and process for 32 nm CMOS technology and beyond
Wang YangYuan
Zhang Xing
Liu XiaoYan
Huang Ru
[J]. SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES, 2008, 51 (06): : 743 - 755
[5] Integration of FeRAM devices into a standard CMOS process - Impact of ferroelectric anneals on CMOS characteristics
Röhner, M.
Mikolajick, T.
Nagel, N.
Hagenbeck, R.
[J]. Integrated Ferroelectrics, 2002, 47 : 61 - 70
[6] Beyond CMOS: quantum devices
Gautier, J
[J]. MICROELECTRONIC ENGINEERING, 1997, 39 (1-4) : 263 - 272
[7] Integration of FeRAM devices into a standard CMOS process-impact of ferroelectric anneals on CMOS characteristics
Röhner, M
Mikolajick, T
Nagel, N
Hagenbeck, R
[J]. INTEGRATED FERROELECTRICS, 2002, 47 : 61 - 70
[8] Nanoelectronics devices: More CMOS, Fusion CMOS and Beyond CMOS
Watanabe, Hisatsune
[J]. 2009 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2009, : 5 - 8
[9] Emerging Logic Devices beyond CMOS
Hao, Ziqian
Yan, Yang
Shi, Yi
Li, Yun
[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2022, 13 (08): : 1914 - 1924
[10] New silicon devices beyond CMOS
Suzuki, E
Ishii, K
Sekigawa, T
[J]. JOURNAL DE PHYSIQUE IV, 2002, 12 (PR3): : 27 - 30

← 1 2 3 4 5 →