We investigate the buildup of strain in InP quantum dots with the addition of shells of the lower-lattice constant materials ZnSe and ZnS by Raman spectroscopy. Both materials induce compressive strain in the core, which increases with increasing shell volume. We observe a difference in the shell behavior between the two materials: the thickness-dependence points toward an influence of the material stiffness. ZnS has a larger Young's modulus and requires less material to develop stress on the InP lattice at the interface, while ZnSe requires several layers to form a stress-inducing lattice at the interface. This hints at the material stiffness being an additional parameter of relevance for designing strained core/shell quantum dots. Published under license by AIP Publishing.
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Indian Inst Sci, Solid Stat & Struct Chem Unit, Bangalore 560012, Karnataka, IndiaIndian Inst Sci, Solid Stat & Struct Chem Unit, Bangalore 560012, Karnataka, India
Ali, Moazzam
Sarma, D. D.
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Indian Inst Sci, Solid Stat & Struct Chem Unit, Bangalore 560012, Karnataka, IndiaIndian Inst Sci, Solid Stat & Struct Chem Unit, Bangalore 560012, Karnataka, India
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Korea Adv Inst Sci & Technol, Dept Chem, Daejeon 34141, South Korea
Samsung Elect, Foundry Business, Hwasung Si 18448, Gyeonggi Do, South KoreaKorea Adv Inst Sci & Technol, Dept Chem, Daejeon 34141, South Korea
Kang, Dong-gu
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Won, Yu-Ho
Park, Chanho
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Korea Adv Inst Sci & Technol, Dept Chem, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Dept Chem, Daejeon 34141, South Korea
Park, Chanho
Han, Yongseok
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Samsung Elect, Samsung Adv Inst Technol, Suwon 16678, Gyeonggi Do, South KoreaKorea Adv Inst Sci & Technol, Dept Chem, Daejeon 34141, South Korea
Han, Yongseok
Kim, Sang Kyu
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Korea Adv Inst Sci & Technol, Dept Chem, Daejeon 34141, South KoreaKorea Adv Inst Sci & Technol, Dept Chem, Daejeon 34141, South Korea
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School of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, ChinaSchool of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, China
Chen, Xiang
Zhao, Hao-Bing
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School of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, ChinaSchool of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, China
Zhao, Hao-Bing
Luo, Zi-Qi
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School of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, ChinaSchool of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, China
Luo, Zi-Qi
Hu, Hai-Long
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School of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, ChinaSchool of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, China
Hu, Hai-Long
Guo, Tai-Liang
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School of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, ChinaSchool of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, China
Guo, Tai-Liang
Li, Fu-Shan
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School of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, ChinaSchool of Physics and Information Engineering, Fuzhou University, Fuzhou,350108, China
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Ist Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, Italy
Liu, Zheming
Llusar, Jordi
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UPV EHU Sci Pk, Basque Ctr Mat Applicat & Nanostruct, BCMaterials, Leioa 48940, SpainIst Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, Italy
Llusar, Jordi
Karakkal, Hiba H.
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Univ Milano Bicocca, Dipartimento Sci Materiali, Via R Cozzi 55, I-20125 Milan, ItalyIst Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, Italy
Karakkal, Hiba H.
Zhu, Dongxu
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Ist Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, Italy
Zhu, Dongxu
Ivanov, Yurii P.
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Ist Italiano Tecnol, Electron Spect & Nanoscopy, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, Italy
Ivanov, Yurii P.
Prato, Mirko
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Ist Italiano Tecnol, Mat Characterizat, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, Italy
Prato, Mirko
Divitini, Giorgio
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Ist Italiano Tecnol, Electron Spect & Nanoscopy, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, Italy
Divitini, Giorgio
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Brovelli, Sergio
Infante, Ivan
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UPV EHU Sci Pk, Basque Ctr Mat Applicat & Nanostruct, BCMaterials, Leioa 48940, Spain
Ikerbasque Basque Fdn Sci, Bilbao 48009, SpainIst Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, Italy
Infante, Ivan
De Trizio, Luca
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Ist Italiano Tecnol, Chem Facil, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, Italy
De Trizio, Luca
Manna, Liberato
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Ist Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, ItalyIst Italiano Tecnol, Nanochem, Via Morego 30, I-16163 Genoa, Italy