MOCVD growth of β-FeSi2 film on modified Si surface by silver and enhancement of luminescence

被引：5
|
作者：
Akiyama, Kensuke [1 ,2 ]
Nojima, Sakiko [1 ]
Takahashi, Ryo [1 ]
Matsumoto, Yoshihisa [1 ]
Funakubo, Hiroshi [2 ]
机构：
[1] Kanagawa Inst Ind Sci & Technol, 705-1 Shimoimaizumi, Ebina, Kanagawa 2430435, Japan
[2] Tokyo Inst Technol, Sch Mat & Chem Technol, Midori Ku, 4259 Nagatsuta Cho, Yokohama, Kanagawa 2288505, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2019年 / 506卷
基金：
日本学术振兴会;
关键词：
Growth models; X-ray diffraction; Metalorganic chemical vapor deposition; Semiconducting silicon compounds; CHEMICAL-VAPOR-DEPOSITION; THIN-FILM; PHOTOLUMINESCENCE PROPERTIES; EPITAXIAL-GROWTH; IRON DISILICIDE; SI(001); PHASE; AG;
D O I：
10.1016/j.jcrysgro.2018.10.022
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The improving of the crystal quality and pronounced enhancement of photoluminescence intensity from beta-FeSi(2)were achieved by pre-coaling silver (Ag) layers on Si(1 0 0) substrates. A modified-Si surface, which formed during the healing step before beta-FeSi2 deposition due to Ag diffusion, was reconstructed the surface into domain structure that minimize the strain caused by lattice matching of beta-FeSi(2 )and Si. This mechanism led to the formation of beta-FeSi2 film with very low levels of density of non-radiative recombination centers, and led to the pronounced enhancement of PL intensity.
引用
收藏
页码：131 / 134
页数：4
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