Optical properties of GaAs based layers characterised by Raman spectroscopy and photoluminescence

被引：1
|
作者：
Srnánek, R [1 ]
Vincze, A [1 ]
McPhail, D [1 ]
Littlewood, S [1 ]
Kromka, A [1 ]
János, L [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Dept Microelect, FEI, Bratislava 81219, Slovakia
来源：
ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/ASDAM.2000.889507
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
GaAs structures were studied by micro-Raman spectroscopy on chemically bevelled samples. We determined the thickness of the layers, quality of the interfaces the presence of impurities (mainly carbon) in the layers, which cause compensation of free carriers. The results were compared with Hall, photoluminescence and SIMS measurements. From the room temperature photoluminescence measurements we were able to identify, the peak position and the band gap of the layers. The low temperature PL shows the incorporated impurities. Our results shows a high level of C and O impurities incorporated to the lattice, which we need to avoid for the development of optoelectronic devices.
引用
收藏
页码：307 / 310
页数：4
相关论文
共 50 条
  • [41] Photoluminescence spectroscopy of quasi-two-dimensional electron gas at a delta doped GaAs (100) layers
    Mokerov, VG
    Fedorov, YV
    Guk, AV
    Khabarov, YV
    DOKLADY AKADEMII NAUK, 1998, 362 (01) : 40 - 43
  • [42] Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study
    Kopaczek, J.
    Linhart, W. M.
    Baranowski, M.
    Richards, R. D.
    Bastiman, F.
    David, J. P. R.
    Kudrawiec, R.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (09)
  • [43] Study of doping in GaAs layers by local probe techniques:: micro-Raman, micro-photoluminescence and cathodoluminescence
    Ardila, AM
    Martínez, O
    Avella, M
    Sanz, LF
    Jiménez, J
    Gérard, B
    Napierala, J
    Gil-Lafon, E
    SPATIALLY RESOLVED CHARACTERIZATION OF LOCAL PHENOMENA IN MATERIALS AND NANOSTRUCTURES, 2003, 738 : 79 - 84
  • [44] Char structure characterised by Raman spectroscopy and its correlations with combustion reactivity
    Sheng, Changdong
    FUEL, 2007, 86 (15) : 2316 - 2324
  • [45] Photoluminescence of Si-doped GaAs epitaxial layers
    Yaremenko, N. G.
    Karachevtseva, M. V.
    Strakhov, V. A.
    Galiev, G. B.
    Mokerov, V. G.
    SEMICONDUCTORS, 2008, 42 (13) : 1480 - 1486
  • [46] Temperature- and Excitation-power-dependent Optical Properties of InAs/GaAs Quantum Dots by Comparison of Photoluminescence and Photoreflectance Spectroscopy
    Kim, Jong Su
    Ko, Byoung Soo
    Yu, Jae-In
    Bae, In-Ho
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (02) : 640 - 645
  • [47] Photoluminescence of Si-doped GaAs epitaxial layers
    N. G. Yaremenko
    M. V. Karachevtseva
    V. A. Strakhov
    G. B. Galiev
    V. G. Mokerov
    Semiconductors, 2008, 42 : 1480 - 1486
  • [48] Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si
    Taghipour, Z.
    Rogers, V
    Ringel, B.
    Liu, A. W. K.
    Fastenau, J. M.
    Lubyshev, D.
    Nelson, S. A.
    Krishna, S.
    JOURNAL OF LUMINESCENCE, 2020, 228
  • [49] PHOTOLUMINESCENCE AND INFRARED-SPECTROSCOPY OF ACCEPTORS IN GAAS
    BISHOP, SG
    SHANABROOK, BV
    MOORE, WJ
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1785 - 1790
  • [50] Raman study of the nitrided GaAs thin layers
    Koh, EK
    Park, YJ
    Kim, EK
    Min, SK
    Choh, SH
    PHYSICAL REVIEW B, 1998, 57 (19): : 11919 - 11922
12345