Optical properties of GaAs based layers characterised by Raman spectroscopy and photoluminescence

被引：1

作者：

Srnánek, R ^{[1
]}

Vincze, A ^{[1
]}

McPhail, D ^{[1
]}

Littlewood, S ^{[1
]}

Kromka, A ^{[1
]}

János, L ^{[1
]}

机构：

[1] Slovak Univ Technol Bratislava, Dept Microelect, FEI, Bratislava 81219, Slovakia

来源：

ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ASDAM.2000.889507

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

GaAs structures were studied by micro-Raman spectroscopy on chemically bevelled samples. We determined the thickness of the layers, quality of the interfaces the presence of impurities (mainly carbon) in the layers, which cause compensation of free carriers. The results were compared with Hall, photoluminescence and SIMS measurements. From the room temperature photoluminescence measurements we were able to identify, the peak position and the band gap of the layers. The low temperature PL shows the incorporated impurities. Our results shows a high level of C and O impurities incorporated to the lattice, which we need to avoid for the development of optoelectronic devices.

引用

页码：307 / 310

页数：4

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