Thermally stable ohmic contacts on n-type 6H- and 4H-SiC based on silicide and carbide

被引：0

作者：

Liu, S ^{[1
]}

Reinhardt, K ^{[1
]}

Severt, C ^{[1
]}

Scofield, J ^{[1
]}

机构：

[1] AERO PROP & POWER DIRECTORATE,AEROSP POWER DIV,WRIGHT PATTERSON AFB,OH 45433

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully obtained ohmic contacts on n-type 6H- and 4H-SiC using Ni, Ni/W, Ni/Ti/W, Ni/Cr/W, CrMr, and Cr/Mo/W metallization systems. Ohmic contacts on both 6H- and 4H-SiC were formed after annealing at 1000 to 1050 degrees C for 5 to 10 minutes. AES chemical depth profiles revealed considerable interdiffusion, and x-ray diffractions identified the formation of a Ni2Si silicide and a Cr3C2 cart,ide after annealing for the Ni and Cr based systems, respectively. Both Ni/Cr/W and Cr/Mo/W contacts are stable when aged at 650 degrees C for 1000 hours.

引用

页码：589 / 592

页数：4

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