Thermally stable ohmic contacts to 6H- and 4H-p-type SiC

被引：10
|
作者：
Liu, S [1 ]
Scofield, J [1 ]
机构：
[1] Univ Dayton, Dayton, OH 45469 USA
来源：
1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE | 1998年
关键词：
D O I：
10.1109/HITEC.1998.676766
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
Conventional Al ohmic contact to p-type SiC demonstrates poor thermal stability owing to the oxidation of Al at elevated temperatures. in order to solve this problem, new Al based ohmic contacts of Al/Ni/W, Al/Ni/Mo, and Al/Ni/Au to p-type SiC were successfully developed. All these contacts become ohmic after annealing at 850 degrees C for 2 to 5 minutes. The contact resistivity of these new contacts ranges from 10(-4) to, 10(-5) ohm-cm(2). These new ohmic contacts show excellent thermal stability. The contact resistivity and I-V characteristics remain unchanged after aging at 600 degrees C for 300 hours. Chemical depth profiles, obtained by Auger electron spectroscopy, indicate that the refractory cap layer, W, Mo, or Au effectively prevents Al from diffusing to the contact surface and forming Al2O3.
引用
收藏
页码：88 / 92
页数：5
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