Cmos LNA design for system-on-chip receiver stages

被引：0

作者：

Telli, A ^{[1
]}

Askar, M ^{[1
]}

机构：

[1] TUBITAK BILTEN, Sci & Tech Res Council Turkey, Informat Technol Inst, TR-06531 Ankara, Turkey

来源：

2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers | 2004年

关键词：

low noise amplifier; LNA; receiver;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, narrowband single-ended inductive source degenerated Low Noise Amplifiers (LNAs) for "System-on-Chip" receiver stages have been designed, simulated and compared using Mietec CMOS 0.7 mu m process and the Cadence/BSIM3v3 tool with active or L-biased DC-bias circuitries. Since there is an intension to use LNAs for GSM and S-band low earth orbit (LEO) space applications, the operating frequencies have been chosen as 900MHz, 2025 MHz and 2210 MHz.

引用

页码：171 / 174

页数：4

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