Enabling light emission from Si based MOSLED on surface nano-roughened si substrate

被引：0
|
作者：
Lin, Gong-Ru [1 ]
机构：
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 106, Taiwan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2008年 / E91C卷 / 02期
关键词：
Si-ion-implantation; PECVD; nanocrystal; silicon; Si-rich SiOx; nano-pyramids; nano-pillars; MOSLED; electroluminescence; fowler-nordheim tunneling;
D O I：
10.1093/ietele/e91-c.2.173
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The historical review of Taiwan's researching activities on the features of PECVD grown SiOx are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiOx film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiOx/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiOx-Si MOSLED.
引用
收藏
页码：173 / 180
页数：8
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