White light emission from CdS/Si nanoheterostructure array

被引:17
|
作者
Li, Yong [1 ,2 ,3 ,4 ]
Yuan, Shu Qing [1 ,2 ]
Li, Xin Jian [3 ,4 ]
机构
[1] Pingdingshan Univ, Dept Phys, Pingdingshan 467000, Peoples R China
[2] Pingdingshan Univ, Solar Energy Res Ctr, Pingdingshan 467000, Peoples R China
[3] Zhengzhou Univ, Dept Phys, Zhengzhou 450052, Peoples R China
[4] Zhengzhou Univ, Phys Mat Lab, Zhengzhou 450052, Peoples R China
基金
中国国家自然科学基金;
关键词
Nanocomposites; Luminescence; White light emission; CdS/Si nanoheterostructure array; Silicon nanoporous pillar array; PHOTOLUMINESCENCE; NANOCRYSTALS; NANOWIRES;
D O I
10.1016/j.matlet.2014.08.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A CdS/Si nanoheterostructure array (CdS/Si-NPA) is fabricated by depositing CdS nanocrystals (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) through a chemical bath deposition method. White light emission from the CdS/Si-NPA is observed under the excitation of 350 nm, which originates from the color mixing of blue emission from Si-NPA and green and red emissions from nc-CdS. The chromaticity coordinate, correlative color temperature and color rendering index are (0.29, 036), 8226 K and 66.0, respectively. The chromaticity coordinates are insensitive to the excitation wavelength between 320 nm and 350 nm. It is suggested that the CdS/Si-NPA might be a kind of potential phosphor in the white light diode. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:67 / 70
页数:4
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