Electrically driven light emission from an array of Si nanoclusters

Charge transport and light emission properties of an array of silicon nanoclusters (NCs), sandwiched between a p-type and an n-type doped silicon crystal, are studied theoretically by assuming that electrons and holes enter from the opposite sides of the array in response to an applied electric field. The size of the NCs considered ranges from 16 nm down to 3.6 nm and their spatial distribution is optimized so that light emission, resulting from radiative recombinations, is peaked in the visible red around 1.8 eV. The light emission efficiency is limited by the carrier hopping times and is found to be in the range 2-0.5%, for fields ranging from 100 kV cm(-1) to 500 kV cm(-1), respectively.