An Accurate Compact Model for GaN Power Switches with the Physics-based ASM-HEMT Model

被引：5

作者：

Khandelwal, Sourabh ^{[1
]}

Labrecque, M. ^{[2
]}

Huang, Y. ^{[2
]}

Qi, F. ^{[2
]}

Wang, Z. ^{[2
]}

Smith, P. ^{[2
]}

Wu, Y. ^{[2
]}

Lal, R. ^{[2
]}

机构：

[1] Macquarie Univ, Sydney, NSW, Australia

[2] Transphorm Inc, Goleta, CA USA

来源：

2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021) | 2021年

关键词：

GaN power switch; SPICE models; GaN SPICE model; GaN Cascode;

D O I：

10.1109/APEC42165.2021.9487372

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A compact/SPICE model for normally-off 650 V GaN power switches is presented. The industry standard physics-based ASM-HEMT model is used as the base for modeling the GaN HEMT in the cascode configured power switch. Accurate models for current-voltage (I-V) and capacitance-voltage (C-V) characteristics have been obtained. It is found that the bias-dependent two-dimensional electron gas under the field-plate regions are very important for modelling the complex capacitances of the cascode switch. Field-plates have been modeled with the ASM-HEMT formulations, and accurate models for input, output, and reverse transfer capacitance of the switch is obtained. The compact model for the full switch is created by synthesizing the MOSFET and HEMT models and optimizing model parameters.

引用

页码：2389 / 2392

页数：4

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