Electrical properties of the surface layer formed on the Nb-doped SrTiO3 single crystal

被引：1

作者：

Han, LQ ^{[1
]}

Iizawa, N ^{[1
]}

Chiba, Y ^{[1
]}

Yoneta, T ^{[1
]}

Kaimai, A ^{[1
]}

Yashiro, K ^{[1
]}

Yugami, H ^{[1
]}

Nigara, Y ^{[1
]}

Kawada, T ^{[1
]}

Mizusaki, J ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

CERAMIC INTERFACES: PROPERTIES AND APPLICATIONS V | 2003年 / 253卷

关键词：

electrical resistance; single crystals; SrTiO3; surface layer;

D O I：

10.4028/www.scientific.net/KEM.253.29

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical properties of the surface layer formed on Sr (Ti-0.999 Nb-0.001) O-3 single crystal were investigated as a function of oxygen partial pressure and temperature. At room temperature, a high resistive layer was found on the surface of the single crystal with thickness of about 10 mu m after annealing in the air. The resistance of the surface layer is high and insensitive to Po-2 in oxidizing atmospheres, but decreased quickly with decreasing Po-2 in reduced atmospheres at elevated temperature. The resistance decreased when temperature increased up to 1200 degrees C. The fitted activation energy of conduction is about 1.62 eV within 109 Po-2 range from -4.0 to -0.1 below 800 degrees C. This value is near reported activation energy of conduction of the grain boundary in SrTiO3.

引用

页码：29 / 41

页数：13

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