Observation of zinc-blende to diamond transition in metastable (GaAs)1-x(Ge2)x alloys by Raman scattering

被引：0
|
作者：
Salazar-Hernández, B [1 ]
Constantino, ME [1 ]
Torres-Cisneros, M [1 ]
Márquez-Aguilar, PA [1 ]
机构：
[1] Univ Autonoma Estado Morelos, Ctr Invest Ingn & Ciencias Aplicadas, Cuernavaca 62210, Morelos, Mexico
来源：
APPLICATIONS OF PHOTONIC TECHNOLOGY 4: CLOSING THE GAP BETWEEN THEORY, DEVELOPMENT, AND APPLICATION | 2000年 / 4087卷
关键词：
semiconductors; thin films; epitaxy; order-disorder transition; phonons; TO mode; LO mode; raman;
D O I：
10.1117/12.406445
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Epitaxial metastable (GaAs)(1-X)(Ge-2)(X) thin films throughout most of the full compositional x range were studied by Raman scattering. Two optical modes were present near the allowed longitudinal optic (LO) and forbidden transverse optical (TO) modes of GaAs. We get direct evidence for the zinc-blend to diamond structural transition (ZB-D transition), which is observed to occur at x approximate to0.35, from the features observed in the compositional dependence of the ratio of the Gamma (a) lower energy to rh higher energy half widths at half maximum intensities Gamma (a/) Gamma (b) of the LO like-mode and those of the integrated intensities of the forbidden TO like-mode and the allowed LO like-mode. Raman scattering data combined with X-ray diffraction results imply that the macroscopically averaged ZB-D transition has manifestation in microscopic sizes at the same concentration.
引用
收藏
页码：508 / 514
页数：7
相关论文
共 50 条
  • [31] Zincblende to diamond structural transition in metastable (GaAs)1-x(Si2)x alloys explained by the linear electro-optic effect
    Acosta-Ortiz, SE
    REVISTA MEXICANA DE FISICA, 1997, 43 (06) : 1002 - 1009
  • [32] Growing and investigation of (Ge2)1-x(ZnSe)x epitaxial layers
    Saidov, MS
    Saidov, AS
    Koschchanov, EA
    Razzakov, AS
    DOKLADY AKADEMII NAUK, 1998, 359 (02) : 188 - 189
  • [33] CORRELATION-EFFECTS IN METASTABLE (GA AS)1-X GE2X ALLOYS
    KOILLER, B
    DAVIDOVICH, MA
    OSORIO, R
    SOLID STATE COMMUNICATIONS, 1985, 55 (10) : 861 - 864
  • [34] Optical properties of (Ge2)1-x (InP)x solid solutions
    Ismailov, Sh. K.
    Saidov, A. S.
    Durshimbetov, K.
    Zhollybekov, B.
    TECHNICAL PHYSICS LETTERS, 2006, 32 (06) : 538 - 541
  • [35] OPTICAL-REFLECTANCE ANISOTROPY IN EPITAXIAL METASTABLE (GAAS)1-X(SI2)X(001) ALLOYS - A PROBE FOR THE ZINCBLENDE TO DIAMOND STRUCTURAL TRANSITION
    LASTRASMARTINEZ, A
    RODRIGUEZPEDROZA, G
    MEI, DH
    KRAMER, B
    LUBBEN, D
    GREENE, JE
    PHYSICAL REVIEW B, 1991, 43 (17): : 14035 - 14039
  • [36] Fabrication of GaN(1-x)Asx, Zinc-Blende, or Wurtzite GaN Depending on GaAs Nitridation Temperature in a CVD System
    Sebastian Ramirez-Gonzalez, Francisco
    Garcia-Salgado, Godofredo
    Morales, Crisaforo
    Diaz, Tomas
    Rosendo, Enrique
    Gabriela Nieto-Caballero, Fabiola
    Alberto Luna, Jose
    Coyopol, Antonio
    Romano, Roman
    Galeazzi, Reina
    CRYSTAL RESEARCH AND TECHNOLOGY, 2018, 53 (08)
  • [37] Physical properties of (GaAs)1-x(Ge2)x:: Influence of growth direction -: art. no. 115328
    Rodriguez, AG
    Navarro-Contreras, H
    Vidal, MA
    PHYSICAL REVIEW B, 2001, 63 (11):
  • [38] GROWTH OF SINGLE-CRYSTAL METASTABLE (GAAS)1-X(SI2)X ALLOYS ON GAAS AND (GAAS)1-X(SI2)X/GAAS STRAINED-LAYER SUPERLATTICES
    MEI, DH
    KIM, YW
    LUBBEN, D
    ROBERTSON, IM
    GREENE, JE
    APPLIED PHYSICS LETTERS, 1989, 55 (25) : 2649 - 2651
  • [39] Local structure of bulk amorphous and crystalline (GaSb)1-x(Ge2)x
    Sapelkin, AV
    Bayliss, SC
    Lyapin, AG
    Brazhkin, VV
    PHYSICAL REVIEW B, 2000, 61 (03): : 1907 - 1911
  • [40] Influence of growth direction on order-disorder transition in (GaAs)1-x(Ge)2x semiconductor alloys
    Rodríguez, AG
    Navarro-Contreras, H
    Vidal, MA
    APPLIED PHYSICS LETTERS, 2000, 77 (16) : 2497 - 2499
12345