Effect of Parameters Variability on the Performance of SiC MOSFET Modules

被引：0

作者：

Borghese, Alessandro ^{[1
]}

Riccio, Michele ^{[1
]}

Fayyaz, Asad ^{[2
]}

Castellazzi, Alberto ^{[2
]}

Maresca, Luca ^{[1
]}

Breglio, Giovanni ^{[1
]}

Irace, Andrea ^{[1
]}

机构：

[1] Univ Naples Federico II, Dept Elect Engn & Informat Technol, Naples, Italy

[2] Univ Nottingham, PEMC Grp, Nottingham, England

来源：

2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRICAL SYSTEMS FOR AIRCRAFT, RAILWAY, SHIP PROPULSION AND ROAD VEHICLES & INTERNATIONAL TRANSPORTATION ELECTRIFICATION CONFERENCE (ESARS-ITEC) | 2018年

关键词：

electrothermal simulation; Monte Carlo simulation; multi-chip; power MOSFET; silicon carbide (SiC); SPICE; SPICE MODEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper introduces a statistical analysis of the impact of devices parameters dispersion on the performances of parallel connected SiC MOSFETs. To this purpose, the statistical fluctuations of threshold voltage and current factor are evaluated on a set of 20 MOSFETs. In order to assess the effects of parameters spread in a real operating condition, the electrothermal simulation of a 200kHz synchronous buck converter is performed. Subsequently, an investigation of the switching energy unbalance, as a function of parameters distribution tolerances, is achieved through several sets of Monte Carlo electrothermal simulations. The results aim at aiding both the design of multi-chip configurations and the selection of appropriate fabrication process rejection boundaries.

引用

页数：5

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