Single-Event Damages Caused by Heavy Ions Observed in AlGaN/GaN HEMTs

被引：59

作者：

Kuboyama, Satoshi ^{[1
]}

Maru, Akifumi ^{[1
]}

Shindou, Hiroyuki ^{[1
]}

Ikeda, Naomi ^{[1
]}

Hirao, Toshio ^{[2
]}

Abe, Hiroshi ^{[2
]}

Tamura, Takashi ^{[1
]}

机构：

[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan

[2] Japan Atom Energy Agcy, Takasaki, Gunma 3701292, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

AlGaN/GaN HEMTs; heavy ions; radiation damage; single-event effects; PROTON;

D O I：

10.1109/TNS.2011.2171504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It was demonstrated that several kinds of permanent damage were introduced by heavy ions in AlGaN/GaN HEMTs similar to SiC devices. A new mode of damage attributable to the transistor structure was also identified in addition to the damage observed similarly in SiC devices.

引用

页码：2734 / 2738

页数：5

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