Application of X-ray reflection interface microscopy to thin-film materials

被引:2
|
作者
Zhang, Zhan [1 ]
Zschack, Paul [1 ]
Fenter, Paul [2 ]
机构
[1] Argonne Natl Lab, Xray Sci Div, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Chem Sci & Engn Div, Argonne, IL 60439 USA
关键词
X-ray reflection interface microscopy; X-ray surface/interface scattering; Oxide thin film; CONTRAST;
D O I
10.1016/j.nima.2010.11.159
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
New X-ray imaging techniques with excellent spatial resolution are under development for investigating surface and interface structures. X-ray reflection imaging microscopy (XRIM) applies full-field imaging to a specularly reflected X-ray beam from a surface or interface. This technique uses a zone plate objective lens to spatially resolve the reflected X-ray intensity and, by exploiting phase contrast, allows steps or terraces to be directly visualized. Thickness fringes caused by interferences in crystalline thin films grown on single-crystal substrates are observed near Bragg peaks and also carry information related to the termination of the film at either the surface or the film-substrate interface. We have applied the XRIM technique to image X-ray intensity along thickness fringes in complex oxide thin-film systems such as SrRuO(3) on SrTiO(3), EuTiO(3) on DyScO(3), and Bi(2)O(3) on SrTiO(3). Measurements of the contrast variations in the images as a function of momentum transfer. Q allow features to be identified as steps/terraces, or attributed to film inhomogeneities. Using both the Q-resolution and the excellent spatial resolution of the XRIM technique, images of fabricated systems with lateral structures are demonstrated. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:188 / 190
页数:3
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