Write and read-out operations of novel 1T2C-type ferroelectric memory cells with an array structure

被引：2

作者：

Yoon, SM ^{[1
]}

Ishiwara, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, R&D Assoc Future Electron Devices, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 5A期

关键词：

1T2C; ferroelectric memory cell; SrBi2Ta2O9; write and read-out operation;

D O I：

10.1143/JJAP.40.L449

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated a 1T2C-type ferroelectric memory array structure with 2 x 3 cells on a silicon-on-insulator (SOI) substrate. Each cell in the array is composed of a metal-ox ide-semiconductor field-effect transistor (MOSFET) and two ferroelectric capacitors with the same area. This type of memory has unique features such as nonvolatile data storage, nondestructive data read-out, and high-density integration based on the scaling rule. It was found that binary data could be correctly stored into a selected cell of the memory array after optimizing the gate SiO2 thickness of the MOSFET. It was also found that the written data could be correctly read out with a current ratio as large as 10 for "0" and "1" data.

引用

页码：L449 / L452

页数：4

共 50 条

[1] Write and read-out operations of novel 1T2C-type ferroelectric memory cells with an array structure
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