Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

被引：43
|
作者：
Yoon, SM [1 ]
Ishiwara, H
机构：
[1] R&D Assoc Future Electron Devices, Tokyo 1100014, Japan
[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Yokohama, Kanagawa 2268503, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 09期
关键词：
data retention; depolarization field; ferroelectric-gate FET; ferroelectric memory; 1T2C; SrBi2Ta2O9;
D O I：
10.1109/16.944189
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel FET-type ferroelectric memory cell with one-transistor, and two-capacitor (1T2C) structure was fabricated and characterized, in which the generation of depolarization field in ferroelectric film during data retention was suppressed by polarizing two ferroelectric capacitors in opposite directions. It was demonstrated that the stored data were nondestructively read-out and their retention time was much longer than that of conventional ferroelectric-gate FET.
引用
收藏
页码：2002 / 2008
页数：7
相关论文
共 50 条
  • [1] Fabrication and characterization of 1T2C-type ferroelectric memory cell
    Ogasawara, S
    Yoon, SM
    Ishiwara, H
    IEICE TRANSACTIONS ON ELECTRONICS, 2001, E84C (06) : 771 - 776
  • [2] A novel data writing method in a 1T2C-type ferroelectric memory
    Ishiwara, H
    Yamamoto, S
    2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2002, : 517 - 520
  • [3] Improved data disturbance effects in 1T2C-type ferroelectric memory array
    Kim, HS
    Yamamoto, S
    Ishiwara, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (5A): : 2558 - 2563
  • [4] Improvement of data readout disturbance effect in 1T2C-type ferroelectric memory
    Kim, HS
    Yamamoto, S
    Ishiwara, H
    INTEGRATED FERROELECTRICS, 2004, 67 : 271 - 280
  • [5] Fabrication and characterization of 1T2C-type ferroelectric memory cell with local interconnections
    Ogasawara, S
    Ishiwara, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B): : 6895 - 6898
  • [6] Analysis of read-out operation in 1T2C-type ferroelectric memory cell
    Ogasawara, S
    Yoon, SM
    Ishiwara, H
    INTEGRATED FERROELECTRICS, 2001, 40 (1-5) : 1481 - 1490
  • [7] Fabrication of 1K-bit 1T2C-type ferroelectric memory cell array
    Yamamoto, S
    Ishikawa, T
    Fuchikami, T
    Kim, HS
    Aizawa, K
    Park, BE
    Furukawa, T
    Ohki, H
    Kikuchi, S
    Hoko, H
    Ishiwara, H
    INTEGRATED FERROELECTRICS, 2004, 67 : 281 - 286
  • [8] Proposal of a planar 8F2 1T2C-type ferroelectric memory cell
    Yamamoto, S
    Kim, HS
    Ishiwara, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (4B): : 2059 - 2062
  • [9] Fabrication and characterization of 1 k-bit 1T2C-type ferroelectric memory cell array
    Kim, HS
    Yamamoto, S
    Ishikawa, T
    Fuchikami, T
    Ohki, H
    Ishiwara, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2715 - 2721
  • [10] A novel PET-type ferroelectric memory with excellent data retention characteristics
    Yoon, SM
    Ishiwara, H
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 317 - 320
12345