Surface morphology evolution of GaAs by low energy ion sputtering

被引：11

作者：

Wang, Y. ^{[1
]}

Yoon, S. F. ^{[1
]}

Ngo, C. Y. ^{[1
]}

Ahn, J. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

NANOSCALE RESEARCH LETTERS | 2007年 / 2卷 / 10期

关键词：

low energy; ion sputtering; surface morphology; GaAs quantum dot;

D O I：

10.1007/s11671-007-9090-4

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low energy Ar(+) ion sputtering, typically below 1,200 eV, of GaAs at normal beam incident angle is investigated. Surface morphology development with respect to varying energy is analyzed and discussed. Dot-like patterns in the nanometer scale are obtained above 600 eV. As the energy approaches upper eV range regular dots have evolved. The energy dependent dot evolution is evaluated based on solutions of the isotropic Kuramoto-Sivashinsky equation. The results are in agreement with the theoretical model which describes a power law dependency of the characteristic wavelength on ion energy in the ion-induced diffusion regime.

引用

页码：504 / 508

页数：5

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