Nano structuring of GaAs(100) surface using low energy ion irradiation

被引：0
|
作者：
Kumar, Tanuj [1 ]
Khan, S. A. [1 ]
Verma, S. [1 ]
Kanjilal, D. [1 ]
机构：
[1] Interuniv Accelerator Ctr, New Delhi 110067, India
来源：
SOLID STATE PHYSICS, PTS 1 AND 2 | 2012年 / 1447卷
关键词：
Sputtering; Nano dots; Ripples; AFM- Atomic Force Microscopy; PSD- Power Spectral Density;
D O I：
10.1063/1.4710197
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nanostructuring of semi insulating GaAs (100) has been observed after irradiation of 50 keV Ar+ ion beam in a wide angular range of 0 degrees to 60 degrees with respect to surface normal. Atomic Force Microscopy (AFM) analysis shows the formation of nano dots at smaller angle of irradiation. At higher angle of irradiation, self organized ripples were developed on the surface. The rms roughness estimated from the AFM analysis shows exponential growth with angle of irradiation. In the high frequency regime, PSD analysis suggests that surface morphology of the irradiated samples is governed by the surface diffusion and mass transport dominated processes.
引用
收藏
页码：703 / 704
页数：2
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