Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates

被引：16
|
作者：
Ma, Bei [1 ]
Jinno, Daiki [1 ]
Miyake, Hideto [1 ]
Hiramatsu, Kazumasa [1 ]
Harima, Hiroshi [2 ]
机构：
[1] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan
[2] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 01期
关键词：
SCATTERING; CRYSTALS;
D O I：
10.1063/1.3674983
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polarized Raman spectroscopy has been performed on high-quality bulk gallium nitride substrates with various crystal orientations. The transverse-optic (TO) and longitudinal-optic (LO) phonons shifted to a lower frequency upon changing the observed crystal plane from polar to semi-polar to nonpolar. This result is well explained by the mixing of A(1) and E-1 optical phonons. In addition, we analyzed in detail the frequency of LO-phonon-plasmon-coupled (LOPC) modes by calculating the peak frequency as a function of carrier concentration and the propagation direction of the LOPC mode. Carrier densities deduced by the analysis showed excellent agreement with the results of Hall measurements. We provide a simple, quick, and nondestructive procedure for identifying nonpolar GaN planes as well as obtaining the carrier concentration. (C) 2012 American Institute of Physics. [doi:10.1063/1.3674983]
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页数：3
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