Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates

被引：16

作者：

Ma, Bei ^{[1
]}

Jinno, Daiki ^{[1
]}

Miyake, Hideto ^{[1
]}

Hiramatsu, Kazumasa ^{[1
]}

Harima, Hiroshi ^{[2
]}

机构：

[1] Mie Univ, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

[2] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 01期

关键词：

SCATTERING; CRYSTALS;

D O I：

10.1063/1.3674983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polarized Raman spectroscopy has been performed on high-quality bulk gallium nitride substrates with various crystal orientations. The transverse-optic (TO) and longitudinal-optic (LO) phonons shifted to a lower frequency upon changing the observed crystal plane from polar to semi-polar to nonpolar. This result is well explained by the mixing of A(1) and E-1 optical phonons. In addition, we analyzed in detail the frequency of LO-phonon-plasmon-coupled (LOPC) modes by calculating the peak frequency as a function of carrier concentration and the propagation direction of the LOPC mode. Carrier densities deduced by the analysis showed excellent agreement with the results of Hall measurements. We provide a simple, quick, and nondestructive procedure for identifying nonpolar GaN planes as well as obtaining the carrier concentration. (C) 2012 American Institute of Physics. [doi:10.1063/1.3674983]

引用

页数：3

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