Fabrication of arrays of organic polymeric thin-film transistors using self-aligned microfluidic channels

被引:18
|
作者
Chabinyc, ML [1 ]
Wong, WS [1 ]
Paul, KE [1 ]
Street, RA [1 ]
机构
[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
关键词
D O I
10.1002/adma.200305533
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Arrays of organic thin-film transistors (TFTs; see Figure) were fabricated using self-aligned microfluidic channels. The self-aligned fluidic channels defined the active area of the TFTs and provided pixel-to-pixel isolation. TFTs made with a regioregular poly(thiophene) had field effect mobilities of 0.05 cm(2) V-1 s(-1) and on/off current ratios of 10(8).
引用
收藏
页码:1903 / +
页数:6
相关论文
共 50 条
  • [41] Laser doping for self-aligned amorphous silicon thin film transistors
    Mei, P
    Anderson, GB
    Boyce, JB
    Fork, DK
    Lujan, R
    PROCEEDINGS OF THE THIRD SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES, 1997, 96 (23): : 51 - 58
  • [42] Gate-all-around polycrystalline-silicon thin-film transistors with self-aligned grain-growth nanowire channels
    Liao, Ta-Chuan
    Kang, Tsung-Kuei
    Lin, Chia-Min
    Wu, Chun-Yu
    Cheng, Huang-Chung
    APPLIED PHYSICS LETTERS, 2012, 100 (09)
  • [43] A Comparative Study on Self-Aligned Top-Gate Thin-Film Transistors with Silicon Nitride as the Interlayer
    Chen, Yankai
    Peng, Junbiao
    Li, Min
    Xu, Miao
    Xu, Hua
    Cai, Wei
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (07):
  • [44] Origin of Electrical Instabilities in Self-Aligned Amorphous In-Ga-Zn-O Thin-Film Transistors
    On, Nuri
    Kang, Youngho
    Song, Aeran
    Du Ahn, Byung
    Kim, Hye Dong
    Lim, Jun Hyung
    Chung, Kwun-Bum
    Han, Seungwu
    Jeong, Jae Kyeong
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (12) : 4965 - 4973
  • [45] Electrical and Structural Characterization of Self-Aligned InGaZnO Thin-film Transistors Fabricated by Excimer Laser Irradiation
    Nakata, Mitsuru
    Tsuji, Hiroshi
    Fujisaki, Yoshihide
    Nakajima, Yoshiki
    Takei, Tatsuya
    Yamamoto, Toshihiro
    IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2017, 53 (06) : 5972 - 5977
  • [46] Implementation of Self-Aligned Top-Gate Amorphous Zinc Tin Oxide Thin-Film Transistors
    Wang, Gang
    Chang, Baozhu
    Yang, Huan
    Zhou, Xiaoliang
    Zhan, Letao
    Zhang, Xiaodong
    Zhang, Shengdong
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (06) : 901 - 904
  • [47] Self-aligned capillarity-assisted printing of top-gate thin-film transistors on plastic
    Hyun, Woo Jin
    Secor, Ethan B.
    Bidoky, Fazel Zare
    Walker, S. Brett
    Lewis, Jennifer A.
    Hersam, Mark C.
    Francis, Lorraine F.
    Frisbie, C. Daniel
    FLEXIBLE AND PRINTED ELECTRONICS, 2018, 3 (03):
  • [48] Facile Inkjet-Printing Self-Aligned Electrodes for Organic Thin-Film Transistor Arrays with Small and Uniform Channel Length
    Doggart, Jason
    Wu, Yiliang
    Liu, Ping
    Zhu, Shiping
    ACS APPLIED MATERIALS & INTERFACES, 2010, 2 (08) : 2189 - 2192
  • [49] Monolithic Integration, Performance, and Comparison of Self-Aligned and Conventional IGZO Thin-Film Transistors on a Flexible Substrate
    Corsino, Dianne
    Catania, Federica
    Ishida, Koichi
    Meister, Tilo
    Ellinger, Frank
    Cantarella, Giuseppe
    Munzenrieder, Niko
    IEEE Journal on Flexible Electronics, 2022, 1 (03): : 159 - 166
  • [50] Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors
    Choi, Sungju
    Jang, Juntae
    Kang, Hara
    Baeck, Ju Heyuck
    Bae, Jong Uk
    Park, Kwon-Shik
    Yoon, Soo Young
    Kang, In Byeong
    Kim, Dong Myong
    Choi, Sung-Jin
    Kim, Yong-Sung
    Oh, Saeroonter
    Kim, Dae Hwan
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (05) : 580 - 583