A 900/1900-MHz Band-Switchable CMOS Power Amplifier

被引：0

作者：

Hamidi, S. Babak ^{[1
]}

Dawn, Debasis ^{[2
]}

机构：

[1] North Dakota State Univ, Dept Elect & Comp Engn, Fargo, ND 58105 USA

[2] Univ Washington, Sch Engn & Technol, Tacoma, WA USA

来源：

2019 IEEE MTT-S INTERNATIONAL MICROWAVE AND RF CONFERENCE (IMARC) | 2019年

关键词：

Band-switchable CMOS power amplifier; LTE mobile network; band switching; saturated power; and power added efficiency;

D O I：

10.1109/imarc45935.2019.9118692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a band-switchable RF power amplifier (PA) fully-integrated in 130nm CMOS process. A two-stage power amplifier with switchable input and output matching networks is designed in order to tune the center frequency in use. The proposed CMOS PA can operate at 900MHz and 1900MHz as lower and higher operating bands, respectively. Thus, Long Term Evolution-advanced (LTE-a) and quad-band GSM standards for cellular applications can he covered. As a result, the designed band-switchable power amplifier obtains small-signal gain (S21) of 31.2dB/32.0dB, saturated output power (Psat) of 22.72dBm/ 23.36dBm, and power added efficiency (PAE) of 23.0 %/ 26.5% at the lower and higher frequency bands, respectively, showing promising advancement compared to the state-of-the-art.

引用

页数：4

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