Dual band CMOS power amplifier for WLAN applications

被引：0

作者：

Jou, CF ^{[1
]}

Cheng, KH ^{[1
]}

Lin, CM ^{[1
]}

Chen, JL ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Commun Engn, Microwave & Millimeter Wave Lab, Hsinchu, Taiwan

来源：

Proceedings of the 46th IEEE International Midwest Symposium on Circuits & Systems, Vols 1-3 | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2.4 GHz / 5.2 GHz dual band CMOS power amplifier (PA) with a 21-dBm output power using 0.25 - mu m 1P5M standard CMOs process is described. In this paper, we present a CMOs PA with a single input and a single output signal chain which simultaneously optimized for wireless local area network (WLAN) 2.4 GHz / 5.2 GHz applications designed on Rogers RO4003 printed-circuit-board (PCB). The simulated dual-band PA biased at Class-A exhibiting P-1dB = 21dBm in both 2.4 GHz and 5.2 GHz with power added efficiency (PAE) = 26% and PAE = 18% separately. The performances of the designed PA presents the standard CMOs process has the potential for the PAs of 2.4 GHz / 5.2 GHz WLAN applications.

引用

页码：1227 / 1230

页数：4

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