Dual band CMOS power amplifier for WLAN applications

被引：0
|
作者：
Jou, CF [1 ]
Cheng, KH [1 ]
Lin, CM [1 ]
Chen, JL [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Commun Engn, Microwave & Millimeter Wave Lab, Hsinchu, Taiwan
来源：
Proceedings of the 46th IEEE International Midwest Symposium on Circuits & Systems, Vols 1-3 | 2003年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 2.4 GHz / 5.2 GHz dual band CMOS power amplifier (PA) with a 21-dBm output power using 0.25 - mu m 1P5M standard CMOs process is described. In this paper, we present a CMOs PA with a single input and a single output signal chain which simultaneously optimized for wireless local area network (WLAN) 2.4 GHz / 5.2 GHz applications designed on Rogers RO4003 printed-circuit-board (PCB). The simulated dual-band PA biased at Class-A exhibiting P-1dB = 21dBm in both 2.4 GHz and 5.2 GHz with power added efficiency (PAE) = 26% and PAE = 18% separately. The performances of the designed PA presents the standard CMOs process has the potential for the PAs of 2.4 GHz / 5.2 GHz WLAN applications.
引用
收藏
页码：1227 / 1230
页数：4
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