Role of Hydrogen Ions in TiO2-Based Memory Devices

被引：17
|
作者：
Jameson, John R. [1 ]
Nishi, Yoshio [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
INTEGRATED FERROELECTRICS | 2011年 / 124卷
基金：
美国国家科学基金会;
关键词：
OXYGEN VACANCIES; DIFFUSION; RESISTANCE; TIO2;
D O I：
10.1080/10584587.2011.573733
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Field-programmable rectification (FPR) and resistive switching in TiO2 are under investigation as bases for nonvolatile memory devices. It has been suggested that FPR results from the field-induced drift of mobile dopants, particularly oxygen vacancies. In this article, it is shown that hydrogen ions, not oxygen vacancies, are the mobile dopant responsible for FPR in the Pt/TiO2/Pt system. In addition, it is shown that resistive switching and FPR are observable in the same device, with FPR existing prior to an electroforming step and resistive switching observed afterwards. This suggests that hydrogen might be a source of resistive switching as well.
引用
收藏
页码：112 / 118
页数：7
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