Role of Hydrogen Ions in TiO2-Based Memory Devices

被引：17
|
作者：
Jameson, John R. [1 ]
Nishi, Yoshio [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
INTEGRATED FERROELECTRICS | 2011年 / 124卷
基金：
美国国家科学基金会;
关键词：
OXYGEN VACANCIES; DIFFUSION; RESISTANCE; TIO2;
D O I：
10.1080/10584587.2011.573733
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Field-programmable rectification (FPR) and resistive switching in TiO2 are under investigation as bases for nonvolatile memory devices. It has been suggested that FPR results from the field-induced drift of mobile dopants, particularly oxygen vacancies. In this article, it is shown that hydrogen ions, not oxygen vacancies, are the mobile dopant responsible for FPR in the Pt/TiO2/Pt system. In addition, it is shown that resistive switching and FPR are observable in the same device, with FPR existing prior to an electroforming step and resistive switching observed afterwards. This suggests that hydrogen might be a source of resistive switching as well.
引用
收藏
页码：112 / 118
页数：7
相关论文
共 50 条
  • [1] Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices
    Jeong, Hu Young
    Lee, Jeong Yong
    Choi, Sung-Yool
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (22) : 3912 - 3917
  • [2] TiO2-based sorbent of lead ions
    Seidlerova, Jana
    Safarik, Ivo
    Rozumova, Lucia
    Safarikova, Mirka
    Motyka, Oldrich
    [J]. 6TH NEW METHODS OF DAMAGE AND FAILURE ANALYSIS OF STRUCTURAL PARTS, 2016, 12 : 147 - 152
  • [3] Transport in porous TiO2 and TiO2-based devices
    不详
    [J]. PHOTOELECTRIC PROPERTIES AND APPLICATIONS OF LOW-MOBILITY SEMICONDUCTORS, 2000, 167 : 41 - 64
  • [4] Stochastic switching of TiO2-based memristive devices with identical initial memory states
    Qingjiang Li
    Ali Khiat
    Iulia Salaoru
    Hui Xu
    Themistoklis Prodromakis
    [J]. Nanoscale Research Letters, 9
  • [5] Stochastic switching of TiO2-based memristive devices with identical initial memory states
    Li, Qingjiang
    Khiat, Ali
    Salaoru, Iulia
    Xu, Hui
    Prodromakis, Themistoklis
    [J]. NANOSCALE RESEARCH LETTERS, 2014, 9 : 1 - 5
  • [6] Uniform resistive switching properties of fully transparent TiO2-based memory devices
    Zou, Lilan
    Hu, Wei
    Xie, Wei
    Bao, Dinghua
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 693 : 1180 - 1184
  • [7] HYDROGEN SENSOR OF TiO2-BASED NANOMATERIALS
    Lyson-Sypien, B.
    Zakrzewska, K.
    Gajewska, M.
    Radecka, M.
    [J]. ARCHIVES OF METALLURGY AND MATERIALS, 2015, 60 (02) : 935 - 940
  • [8] Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices
    Liu, Li-Feng
    Kang, Jin-Feng
    Xu, Nuo
    Sun, Xiao
    Chen, Chen
    Sun, Bing
    Wang, Yi
    Liu, Xiao-Yan
    Zhang, Xing
    Han, Ru-Qi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2701 - 2703
  • [9] TiO2-based structures for nanoscale memory applications
    Froehlich, K.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (05) : 1186 - 1195
  • [10] TiO2-based materials for photocatalytic hydrogen production
    Chiarello, G. L.
    Dozzi, M. V.
    Selli, E.
    [J]. JOURNAL OF ENERGY CHEMISTRY, 2017, 26 (02) : 250 - 258
12345