Development of magnetic tunnel junction for toggle MRAM

被引：10

作者：

Kim, HJ ^{[1
]}

Oh, SC ^{[1
]}

Bae, JS ^{[1
]}

Nam, KT ^{[1
]}

Lee, JE ^{[1
]}

Park, SO ^{[1
]}

Kim, HS ^{[1
]}

Lee, NI ^{[1
]}

Chung, UI ^{[1
]}

Moon, JT ^{[1
]}

Kang, HK ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Adv Proc Dev, Proc Dev Team, Yongin 449711, South Korea

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 10期

关键词：

exchange coupling field; magnetic anisotropy field; magnetic tunnel junction (MTJ); toggle MRAM;

D O I：

10.1109/TMAG.2005.854935

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Toggle switching mode MRAM is tested and characterized with respect to the free- and pinned-layer material,and thickness. With magnetization curves, we were able to find the optimum thickness combinations of free-layer and spacer materials. For CoFeB where the intrinsic anisotropy field (Hi) is about 20-30 Oe, one needs to have a reasonably high exchange coupling field (Hex) to ensure large switching margin. In case of an NiFe/Ru/NiFe free-layer, Hi is usually much smaller than Hex, so that further decrease of Hex between two magnetic layers is needed. The pinned-layer roughness and thickness are other factors to be optimized to reduce the toggle switching field. High cell aspect ratio >= 3.0 helps to minimize the switching distribution and enhance the switching stability.

引用

页码：2661 / 2663

页数：3

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