N-type negative differential conductance in quasiballistic single-barrier heterostructures

被引：2

作者：

Aleshkin, VY

Reggiani, L

Reklaitis, A

机构：

[1] Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

[2] Univ Lecce, Ist Nazl Fis Mat, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy

[3] Inst Semicond Phys, LT-2600 Vilnius, Lithuania

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 08期

关键词：

D O I：

10.1063/1.1404420

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose a mechanism for negative differential conductance in nanometric single barrier heterostructures when transport is controlled by tunneling processes and space charge effects. Theoretical expectations are confirmed by Monte Carlo simulations of a model GaAs-GaAlAs-GaAs semiconductor heterostructure. (C) 2001 American Institute of Physics.

引用

页码：3979 / 3983

页数：5

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