N-type negative differential conductance in quasiballistic single-barrier heterostructures

被引：2
|
作者：
Aleshkin, VY
Reggiani, L
Reklaitis, A
机构：
[1] Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia
[2] Univ Lecce, Ist Nazl Fis Mat, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy
[3] Inst Semicond Phys, LT-2600 Vilnius, Lithuania
来源：
JOURNAL OF APPLIED PHYSICS | 2001年 / 90卷 / 08期
关键词：
D O I：
10.1063/1.1404420
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We propose a mechanism for negative differential conductance in nanometric single barrier heterostructures when transport is controlled by tunneling processes and space charge effects. Theoretical expectations are confirmed by Monte Carlo simulations of a model GaAs-GaAlAs-GaAs semiconductor heterostructure. (C) 2001 American Institute of Physics.
引用
收藏
页码：3979 / 3983
页数：5
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