共 50 条
- [1] NEGATIVE DIFFERENTIAL CONDUCTANCE IN N-TYPE GERMANIUM [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (11): : 1412 - +
- [2] N-TYPE NEGATIVE-RESISTANCE OF ZINC-DOPED N-TYPE SI [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 844 - 845
- [3] CHARACTERISTIC FEATURES OF N-TYPE NEGATIVE RESISTANCE AND OF NEGATIVE PHOTOCONDUCTIVITY OF GOLD-DOPED N-TYPE SI SAMPLES [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 935 - +
- [4] NEGATIVE ABSOLUTE RESISTANCE IN PURE N-TYPE GE (ERLBACH EFFECT) [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (02): : 276 - +
- [7] BULK NEGATIVE DIFFERENTIAL CONDUCTANCE IN N-TYPE GERMANIUM AT LOW ELECTRIC FIELDS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (02): : 256 - &
- [8] PHOTOSTIMULATED N-TYPE NEGATIVE DIFFERENTIAL CONDUCTANCE UNDER THE MAGNETOCONCENTRATION EFFECT CONDITIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 109 - 111
- [9] N-TYPE NEGATIVE DIFFERENTIAL CONDUCTANCE IN EXTRINSIC SEMICONDUCTORS UNDER THE PINCH EFFECT CONDITIONS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (08): : 950 - 951
- [10] Comparison of currentline pore growth in n-type InP and in n-type Si [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 6, 2011, 8 (06): : 1779 - 1782