A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure

被引：8
|
作者：
Chen, Tzu-Pin [1 ]
Cheng, Shiou-Ying [2 ]
Hung, Ching-Wen [1 ]
Chu, Kuei-Yi [1 ]
Chen, Li-Yang [1 ]
Tsai, Tsung-Han [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Nation Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期
关键词：
breakdown; electron blocking; potential spike; step-graded collector;
D O I：
10.1109/LED.2007.911286
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (I-C = 10(-12) A to I-C = 10(-1) A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency f(T) = 72.7 GHz and the maximum oscillation frequency f(max) = 50 GHz are achieved for a nonoptimized device (A(E) = 6 x 6 mu m(2)).
引用
收藏
页码：11 / 14
页数：4
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