A new InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector structure

被引：8

作者：

Chen, Tzu-Pin ^{[1
]}

Cheng, Shiou-Ying ^{[2
]}

Hung, Ching-Wen ^{[1
]}

Chu, Kuei-Yi ^{[1
]}

Chen, Li-Yang ^{[1
]}

Tsai, Tsung-Han ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Nation Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 01期

关键词：

breakdown; electron blocking; potential spike; step-graded collector;

D O I：

10.1109/LED.2007.911286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An interesting InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs layer at the base-collector (B-C) heterojunction is fabricated and studied. Simulated results reveal that the potential spike at the B-C heterointerface is completely eliminated. Experimentally, the operation regime is wider than 11 decades in magnitude of the collector current (I-C = 10(-12) A to I-C = 10(-1) A). Furthermore, the studied device exhibits a relatively high common-emitter breakdown voltage and low output conductance even at high temperature. In the microwave characteristics, the unity current gain cutoff frequency f(T) = 72.7 GHz and the maximum oscillation frequency f(max) = 50 GHz are achieved for a nonoptimized device (A(E) = 6 x 6 mu m(2)).

引用

页码：11 / 14

页数：4

共 50 条

[31] A THz InGaAs/InP double heterojunction bipolar transistor with fmax=325 GHz and BVCBO=10.6 V
程伟
王元
赵岩
陆海燕
高汉超
杨乃彬
Journal of Semiconductors, 2013, (05) : 76 - 78
[32] An improved model for InP/InGaAs double heterojunction bipolar transistors
Shi, Yuxia
Jin, Zhi
Su, Yongbo
Cao, Yuxiong
Wang, Yan
SOLID-STATE ELECTRONICS, 2013, 81 : 163 - 169
[33] Metamorphic InP/InGaAs double-heterojunction bipolar transistor structure grown on GaAs by solid source molecular beam epitaxy
Zheng, HQ
Radhakrishnan, K
Wang, H
Yuan, KH
Yoon, SF
Ng, GI
2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, : 41 - 44
[34] Metamorphic InP/InGaAs double-heterojunction bipolar transistor structure grown on GaAs by solid source molecular beam epitaxy
Zheng, Haiqun
Radhakrishnan, K.
Wang, Hong
Yuan, Kaihua
Yoon, Soon Fatt
Ng, Geok Ing
Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2000, : 41 - 44
[35] Extraction of the InP/InGaAs metallic collector-up heterojunction bipolar transistor small-signal equivalent circuit
Bourguiga, R.
Oudir, A.
Mahdouani, M.
Pardo, F.
Pelouard, J. L.
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2008, 42 (03): : 177 - 186
[36] InGaAs/InAlAs/InP collector-up microwave heterojunction bipolar transistors
Sato, Hiroya
Vlcek, James C.
Fonstad, Clifton G.
Meskoob, B.
Prasad, S.
Electron device letters, 1990, 11 (10): : 457 - 459
[37] InP/InGaAs/InP Double Heterojunction Bipolar Transistors with 300 GHz Fmax
Krishnan, S
Dahlstrom, M
Mathew, T
Wei, Y
Scott, D
Urteaga, M
Rodwell, MJW
Liu, WK
Lubyshev, D
Fang, XM
Wu, Y
2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 31 - 34
[38] Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor
Wang, WC
Pan, HJ
Thei, KB
Lin, KW
Yu, KH
Cheng, CC
Cheng, SY
Liu, WC
SUPERLATTICES AND MICROSTRUCTURES, 2001, 29 (05) : 359 - 365
[39] INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS INCORPORATING CARBON-DOPED BASES AND SUPERLATTICE GRADED BASE-COLLECTOR JUNCTIONS
GEE, RC
LIN, CL
FARLEY, CW
SEABURY, CW
HIGGINS, JA
KIRCHNER, PD
WOODALL, JM
ASBECK, PM
ELECTRONICS LETTERS, 1993, 29 (10) : 850 - 851
[40] COLLECTOR-EMITTER OFFSET VOLTAGE IN INP INGAAS SINGLE AND DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
OUACHA, A
WILLANDER, M
HAMMARLUND, B
LOGAN, RA
SOLID-STATE ELECTRONICS, 1994, 37 (01) : 201 - 203

← 1 2 3 4 5 →