Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

被引：0
|
作者：
Huang, Jian [1 ]
Guo, Daqian [2 ]
Deng, Zhuo [1 ]
Liu, Huiyun [2 ]
Wu, Jiang [2 ]
Chen, Baile [1 ]
机构：
[1] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
[2] UCL, Dept Elect & Elect Engn, London, England
来源：
2018 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2018年
基金：
英国工程与自然科学研究理事会;
关键词：
InAs/GaSb type-II superlattices; infrared detectors; barrier detectors; mid wavelength;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We present a GaAs based PiBN InAs/GaSb type II superlattice photodetector for mid infrared application with peak responsivity of 0.52A/W at 3.2um at 77K under 0V.
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页数：3
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