Mid-wave infrared HgCdTe nBn photodetector

被引：126
|
作者：
Itsuno, Anne M. [1 ]
Phillips, Jamie D. [1 ]
Velicu, Silviu [2 ]
机构：
[1] Univ Michigan, Dept Elect Engn, Ann Arbor, MI 48109 USA
[2] EPIR Technol, Bolingbrook, IL 60440 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 16期
基金：
美国国家科学基金会;
关键词：
cadmium compounds; II-VI semiconductors; infrared detectors; mercury compounds; numerical analysis; photodetectors; semiconductor doping; SURFACE LEAKAGE CURRENTS; DEFECTS; MBE; IMPLANTATION; DIODES;
D O I：
10.1063/1.4704359
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A unipolar, barrier-integrated HgCdTe nBn photodetector with all n-type doping and a type-I band lineup is experimentally demonstrated. Planar mid-wave infrared (MWIR) nBn devices exhibit current-voltage (I-V) characteristics that are consistent with band inversion in reverse bias, indicating a barrier-influenced behavior. Dark current saturation is observed beyond a reverse bias of approximately -0.8 V. Bias-dependent photoresponse is observed in the mid-wave infrared with a cut-off wavelength around 5.7 mu m. Numerical modeling based on experimental results predicts an internal peak quantum efficiency of approximately 66%. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4704359]
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页数：3
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