Heat Dissipation Improvement with Diamond Heat Spreader on Hybrid Si Micro-Cooler for GaN Devices

被引：0

作者：

Han, Yong ^{[1
]}

Lau, Boon Long ^{[1
]}

Tang, Gongyue ^{[1
]}

Zhang, Xiaowu ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, 11 Sci Pk Rd,Singapore Sci Pk 2, Singapore 117685, Singapore

来源：

PROCEEDINGS OF THE 2015 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2015年

关键词：

Microelectronic cooling; GaN device; Diamond heat spreader; Micro-jet array impingement;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A diamond heat spreader of small size has been directly attached between the chip and the hybrid Si micro-cooler for thermal performance improvement of the GaN-on-Si device. In the fabricated test vehicle, one hotspot of size 450x300 mu m(2) is used to mimic the heating area of one GaN unit. The microwave CVD diamond of high thermal conductivity was bonded through TCB process. With the diamond heat spreader attached on the micro-channel/micro-jet cooler, to dissipated hotspot heat flux 5kW/cm(2) and 6.5kW/cm(2), the maximum chip temperature can be reduced by 25.7% and 26.1%, respectively. Two types of diamond heat spreader of different thermal conductivities are tested and compared. High improvement of heat dissipation capability has been demonstrated.

引用

页码：603 / 606

页数：4

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