Growth and surface morphology of ion-beam sputtered Ti-Ni thin films

被引:2
|
作者
Rao, Ambati Pulla [1 ]
Sunandana, C. S. [2 ]
机构
[1] Univ Hyderabad, ACHREM, Hyderabad 500046, Andhra Pradesh, India
[2] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
关键词
Ti-Ni thin films; ion beam sputtering; XPS; AFM;
D O I
10.1016/j.nimb.2007.12.061
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Titanium-nickel thin films have been deposited on float glass substrates by ion beam sputtering in 100% pure argon atmosphere. Sputtering is predominant at energy region of incident ions, 1000 eV to 100 keV. The as-deposited films were investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). In this paper we attempted to study the surface morphology and elemental composition through AFM and XPS, respectively. Core level as well as valence band spectra of ion-beam sputtered Ti-Ni thin films at various Ar gas rates (5, 7 and 12 sccm) show that the thin film deposited at 3 seem possess two distinct peaks at binding energies 458.55 eV and 464.36 eV mainly due to TiO2 Upon increasing Ar rate oxidation of Ti-Ni is reduced and the Ti-2p peaks begin approaching those of pure elemental Ti. Here Ti-2p peaks are observed at binding energy positions of 454.7 eV and 460.5 eV. AFM results show that the average grain size and roughness decrease, upon increasing Ar gas rate, from 2.90 mu m to 0.096 mu m and from 16.285 mu m to 1.169 nm, respectively. (C) 2008 Elsevier B.V. All rights reserved.
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页码:1517 / 1521
页数:5
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