Capacitance-voltage and impedance characteristics of field-effect EIS sensors functionalised with polyelectrolyte multilayers

被引：12
|
作者：
Poghossian, A. [1 ,2 ]
Abouzar, M. H. [1 ,2 ]
Schoening, M. J. [1 ,2 ]
机构：
[1] Aachen Univ Appl Sci, INB, D-52428 Julich, Germany
[2] Res Ctr Julich GmbH, IBN, D-52425 Julich, Germany
来源：
IRBM | 2008年 / 29卷 / 2-3期
关键词：
field-effect EIS sensor; capacitance-voltage; impedance; polyelectrolytes; layer-by-layer adsorption;
D O I：
10.1016/j.rbmret.2007.11.018
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
Impedance-spectroscopy (IS) and capacitance-voltage characteristics of a field-effect-based electrolyte-insulator-semiconductor (EIS) sensor functionalised with polyelectrolyte (PE) multilayers have been investigated. The PE multilayers were obtained using the layer-by-layer technique by a consecutive adsorption of positively charged (poly(allylamine hydrochloride)) (PAH) and negatively charged (poly(sodium 4-styrene sulfonate)) (PSS) on a p-Si-SiO2 structure. Alternating shifts in the impedance and capacitance-voltage curves have been observed after the adsorption of each polyanion and polycation layer, respectively. The effects of the number of the adsorbed PE layers and polarity of the outermost layer on the impedance and capacitance-voltage curves are discussed. (C) 2007 Elsevier Masson SAS. All rights reserved.
引用
收藏
页码：149 / 154
页数：6
相关论文
共 50 条
  • [41] Current-Voltage Model for Negative Capacitance Field-Effect Transistors
    Lee, Hyunjae
    Yoon, Youngki
    Shin, Changhwan
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (05) : 669 - 672
  • [42] Tilt-axis effect on oxidation behaviour and capacitance-voltage characteristics of (100) silicon
    Woo, HJ
    Choi, DJ
    Kim, GH
    JOURNAL OF MATERIALS SCIENCE, 1997, 32 (22) : 6101 - 6106
  • [43] Analysis of hysteresis behavior of pentacene field effect transistor characteristics with capacitance-voltage and optical second harmonic generation measurements
    Lim, Eunju
    Manaka, Takaaki
    Tamura, Ryosuke
    Iwamoto, Mitsumasa
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (09)
  • [44] Analysis of hysteresis behavior of pentacene field effect transistor characteristics with capacitance-voltage and optical second harmonic generation measurements
    Lim, Eunju
    Manaka, Takaaki
    Tamura, Ryosuke
    Iwamoto, Mitsumasa
    Journal of Applied Physics, 2007, 101 (09):
  • [45] EFFECT OF BACK CONTACT IMPEDANCE ON FREQUENCY-DEPENDENCE OF CAPACITANCE-VOLTAGE MEASUREMENTS ON METAL DIAMOND DIODES
    VENKATESAN, V
    DAS, K
    VONWINDHEIM, JA
    GEIS, MW
    APPLIED PHYSICS LETTERS, 1993, 63 (08) : 1065 - 1067
  • [46] CHARACTERISTICS OF PH SENSORS BASED ON FIELD-EFFECT TRANSISTORS
    KOZLOV, AM
    FEDOTOV, VP
    LERNER, MD
    POTAPOVA, EV
    JOURNAL OF ANALYTICAL CHEMISTRY OF THE USSR, 1990, 45 (07): : 993 - 994
  • [47] QUANTIZATION EFFECT ON CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERISTICS OF AN INAS/ALSB/GASB INTERBAND TUNNELING DIODE
    YANG, L
    WU, MC
    CHEN, JF
    CHEN, YK
    SNIDER, GL
    CHO, AY
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) : 4286 - 4289
  • [48] Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
    E. A. Tarasova
    E. S. Obolenskaya
    A. V. Hananova
    S. V. Obolensky
    V. E. Zemliakov
    V. I. Egorkin
    A. V. Nezhenzev
    A. V. Saharov
    A. F. Zazul’nokov
    V. V. Lundin
    E. E. Zavarin
    G. V. Medvedev
    Semiconductors, 2016, 50 : 1574 - 1578
  • [49] Penicillin detection by means of field-effect based sensors:: EnFET, capacitive EIS sensor or LAPS?
    Poghossian, A
    Yoshinobu, T
    Simonis, A
    Ecken, H
    Lüth, H
    Schöning, MJ
    SENSORS AND ACTUATORS B-CHEMICAL, 2001, 78 (1-3) : 237 - 242
  • [50] EFFECT OF SURFACE PASSIVATION ON CAPACITANCE-VOLTAGE CHARACTERISTICS OF Sn/p-Si SCHOTTKY CONTACTS
    Temirci, Cabir
    Bati, Bahri
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2011, 25 (04): : 531 - 542
12345