Tunable index silicon nitride for extended silicon photonics applications

被引：0

作者：

Gardes, F. Y. ^{[1
]}

Bucio, T. Dominguez ^{[1
]}

de Paoli, G. ^{[1
]}

Ilie, S. T. ^{[1
]}

Skandalos, I. ^{[1
]}

Lacava, C. ^{[1
]}

Milosevic, M. ^{[1
]}

Jantzen, S. L. ^{[1
]}

Khokhar, A. Z. ^{[1
]}

Petropoulos, P. ^{[1
]}

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

来源：

2019 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2019年

关键词：

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate PECVD based silicon nitride materials for range of applications. These applications are for non-linear functionalities in the C band, coarse wavelength division multiplexing in the 0 band and a 1-micron thick SiN waveguiding platform at 2 microns demonstrating filters and trimming capabilities. Comments and questions should be directed to F.Y.Gardes (e-mail: fgardes@soton.ac.uk). (C) 2019

引用

页数：2

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