Tunable index silicon nitride for extended silicon photonics applications

被引：0
|
作者：
Gardes, F. Y. [1 ]
Bucio, T. Dominguez [1 ]
de Paoli, G. [1 ]
Ilie, S. T. [1 ]
Skandalos, I. [1 ]
Lacava, C. [1 ]
Milosevic, M. [1 ]
Jantzen, S. L. [1 ]
Khokhar, A. Z. [1 ]
Petropoulos, P. [1 ]
机构：
[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
来源：
2019 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2019年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate PECVD based silicon nitride materials for range of applications. These applications are for non-linear functionalities in the C band, coarse wavelength division multiplexing in the 0 band and a 1-micron thick SiN waveguiding platform at 2 microns demonstrating filters and trimming capabilities. Comments and questions should be directed to F.Y.Gardes (e-mail: fgardes@soton.ac.uk). (C) 2019
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页数：2
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