Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

被引：270

作者：

Lu, H ^{[1
]}

Schaff, WJ ^{[1
]}

Hwang, J ^{[1
]}

Wu, H ^{[1
]}

Koley, G ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 10期

关键词：

D O I：

10.1063/1.1402649

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy (MBE) is studied. Using an AlN buffer layer can significantly improve the structural and electrical properties of InN. With increasing thickness of the AlN buffer layer, the Hall mobility of InN will monotonically increase while the electron carrier concentration decreases. The surface morphology of the film also improves. A Hall mobility of more than 800 cm(2)/V s with a carrier concentration of 2-3 x 10(18) cm(-3) at room temperature can be routinely obtained on similar to0.1 mum InN film. More importantly, it is found that under optimum growth conditions, by using an AlN buffer layer, InN films with comparable quality can be achieved by the conventional MBE technique compared to InN grown by migration-enhanced epitaxy. Increasing InN thickness also increases Hall mobility. (C) 2001 American Institute of Physics.

引用

页码：1489 / 1491

页数：3

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