Modeling and Simulation of Nonlinear Transient Responses of High-Voltage Wordline Generators in NAND Flash Memories

被引：0

作者：

Lee, Juyun ^{[1
]}

Kwon, Jeong Yeol ^{[1
]}

Kim, Jaeha ^{[1
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect & Comp Engn, Seoul, South Korea

来源：

2015 INTERNATIONAL SOC DESIGN CONFERENCE (ISOCC) | 2015年

关键词：

Behavioral modeling; NAND flash memory; Nonlinear model; Transient response;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper describes a behavioral modeling methodology for the nonlinear transient responses of the high-voltage wordline generator in NAND flash memories. Behaviors that affect transient responses are modeled in the behavioral models to reduce computation loads. The transient response simulation including the proposed behavioral models for bandgap references, low drop-out regulators, and switched-capacitor charge-pump achieves 846X speed-up using XMODEL compared to the simulation time using HSPICE.

引用

页码：323 / 324

页数：2

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