Modeling and Optimization of Smoothly Tapered Junction Termination Extension for High-Voltage SiC BJTs and Thyristors by Simulation

被引：1

作者：

Long, Hu ^{[1
,2
]}

Huang, Linyang ^{[1
,2
]}

Shao, Fangge ^{[1
,2
]}

Ren, Na ^{[1
,2
]}

Sheng, Kuang ^{[1
,2
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China

[2] Zhejiang Univ, ZJU Hangzhou Global Sci & Technol Innovat Ctr, Hangzhou 311215, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2022年 / 69卷 / 03期

关键词：

Silicon carbide; Junctions; Thyristors; Doping; Semiconductor process modeling; Optimization; Impact ionization; Edge termination; high voltage; power devices; silicon carbide (SiC); PIN DIODES; 1 CM(2); KV; DESIGN; TRENCH;

D O I：

10.1109/TED.2021.3130855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on a newly proposed edge termination technique on silicon carbide (SiC) device named aperture density modulation (ADM), this article investigates the optimization strategy of a family of termination structures derived from it. Using both analytical modeling and numerical simulation, this article demonstrates the capability of achieving 15-kV breakdown voltage with a termination length of 160-240 mu in theory. Besides, the fabrication feasibility with profile customizability is also demonstrated in experiments while still keeping a low process cost.

引用

页码：1169 / 1175

页数：7

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