Contributions to development of power SiC devices

被引：0

作者：

Avram, M ^{[1
]}

Brezeanu, G ^{[1
]}

Iliescu, C ^{[1
]}

Neagoe, O ^{[1
]}

机构：

[1] Natl Inst Res & Dev Microtechnol, Bucharest, Romania

来源：

2004 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1AND 2, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comparative study on high voltage MOSFET and IGBT devices (internal cell, electrical characteristics) demonstrate the similarity of both devices. This paper presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT The IGBT can block voltages tip to 1800V (for V-GS=-80V), with a specific on-resistance as low as 13mW/cm(2), 100 - 200 lower than similar IGBT on Si. Comparing the circuit performance to that of a SiC IGBT, it turns out is almost twice faster than the MOSFET.

引用

页码：303 / 306

页数：4

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